Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
IXDH35N60BD1
|
IXYS | IGBT 600V 60A 250W TO247AD | 0 | $2.10 | |
HGTG7N60A4D
|
ON Semiconductor | IGBT 600V 34A 125W TO247 | 0 | $2.09 | |
STGWT20H60DF
|
STMicroelectronics | IGBT 600V 40A 167W TO3PF | 0 | $2.07 | |
IKP20N60TAHKSA1
|
Infineon Technologies | IGBT 600V 40A 166W TO220-3-1 | 0 | $2.06 | |
FGA30T65SHD
|
ON Semiconductor | IGBT 650V 60A 238W TO-3PN | 0 | $2.06 | |
IRG4BC40KPBF
|
Infineon Technologies | IGBT 600V 42A 160W TO220AB | 0 | $2.06 | |
IXA20I1200PB
|
IXYS | IGBT 1200V 33A 130W TO220 | 0 | $2.05 | |
STGP10NB60SD
|
STMicroelectronics | IGBT 600V 29A 80W TO220 | 0 | $2.01 | |
FGA40T65SHDF
|
ON Semiconductor | IGBT 650V 80A 268W TO-3PN | 0 | $2.00 | |
IRGS10B60KDTRRP
|
Infineon Technologies | IGBT 600V 22A 156W D2PAK | 0 | $2.00 |
IXDH35N60BD1
HGTG7N60A4D
STGWT20H60DF
IKP20N60TAHKSA1
FGA30T65SHD
IRG4BC40KPBF
IXA20I1200PB
STGP10NB60SD
IRGS10B60KDTRRP