Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number	Manufacturer	Description	Quantity	Price	Option
IXGK50N90B2D1	IXYS	IGBT 900V 75A 400W TO264	0	$7.94	RFQ
APT54GA60BD30	Microsemi Corporation	IGBT 600V 96A 416W TO247	0	$7.99	RFQ
IXGT15N120CD1	IXYS	IGBT 1200V 30A 150W TO268	0	$7.86	RFQ
IXDR35N60BD1	IXYS	IGBT 600V 38A 125W ISOPLUS247	0	$7.84	RFQ
IXGQ35N120BD1	IXYS	IGBT 1200V 75A 400W TO3P	0	$7.77	RFQ
IXGT15N120BD1	IXYS	IGBT 1200V 30A 150W TO268	0	$7.66	RFQ
APT13GP120BDQ1G	Microsemi Corporation	IGBT 1200V 41A 250W TO247	0	$7.66	RFQ
STGW40S120DF3	STMicroelectronics	IGBT 1200V 40A TO247	0	$7.65	RFQ
APT30GS60BRDLG	Microsemi Corporation	IGBT 600V 54A 250W TO247	0	$7.64	RFQ
FGY100T65SCDT	ON Semiconductor	FS3TIGBT TO247 100A 650V	0	$7.54	RFQ