Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
IXGT15N120B IXYS IGBT 1200V 30A 180W TO268 0 $8.61
IXGH17N100 IXYS IGBT 1000V 34A 150W TO247AD 0 $8.61
IXGH30N120C3H1 IXYS IGBT 1200V 48A 250W TO247AD 0 $8.61
IXGR24N120C3D1 IXYS IGBT 1200V 48A 200W ISOPLUS247 0 $8.57
IXDR30N120D1 IXYS IGBT 1200V 50A 200W ISOPLUS247 0 $8.55
IXBT10N170 IXYS IGBT 1700V 20A 140W TO268 0 $8.44
STGW80H65FB-4 STMicroelectronics IGBT BIPO 650V 80A TO247 0 $8.37
IXGT28N120B IXYS IGBT 1200V 50A 250W TO268 0 $8.27
FGH25N120FTDS ON Semiconductor IGBT 1200V 50A 313W TO247 2 $8.26
IXGT24N60B IXYS IGBT 600V 24A TO268 0 $8.22