Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number	Manufacturer	Description	Quantity	Price	Option
IXYH80N90C3	IXYS	IGBT 900V 165A 830W TO247	0	$7.28	RFQ
IXA55I1200HJ	IXYS	IGBT 1200V 84A 290W TO247	0	$7.25	RFQ
IXYH30N120C3	IXYS	IGBT 1200V 75A 500W TO247	0	$7.25	RFQ
IKFW75N60ETXKSA1	Infineon Technologies	INDUSTRY 14	0	$7.27	RFQ
APT45GR65B2DU30	Microsemi Corporation	INSULATED GATE BIPOLAR TRANSISTO	0	$7.25	RFQ
IXGH72N60A3	IXYS	IGBT 600V 75A 540W TO247	0	$7.21	RFQ
IXXH50N60C3	IXYS	IGBT 600V 100A 600W TO247AD	0	$7.04	RFQ
IXGH72N60C3	IXYS	IGBT 600V 75A 540W TO247AD	0	$7.06	RFQ
APT30GT60BRG	Microsemi Corporation	IGBT 600V 64A 250W TO247	0	$7.03	RFQ
STGWA15H120DF2	STMicroelectronics	IGBT HB 1200V 15A HS TO247-3	6	$7.00	RFQ