IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
FZ1200R33KL2CNOSA1
|
Infineon Technologies | IGBT MODULE 3300V IHV 190MM | 0 | $0.00 | |
|
FD800R33KL2CKB5NOSA1
|
Infineon Technologies | IGBT MODULE 3300V IHV 190MM | 0 | $0.00 | |
VS-GP250SA60S
|
Vishay / Semiconductor - Diodes Division | IGBT 600V 380A 893W SOT-227 | 0 | $0.00 | |
|
VS-GP100TS60SFPBF
|
Vishay / Semiconductor - Diodes Division | IGBT | 0 | $0.00 | |
|
VS-150MT060WDF
|
Vishay / Semiconductor - Diodes Division | DIODE GEN PURP | 0 | $0.00 | |
VS-GT105LA120UX
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 105A LS CHOP SOT-227 | 0 | $0.00 | |
|
IRG7U75HF12A
|
Infineon Technologies | MOD IGBT 1200V 75A POWIR 34 | 0 | $0.00 | |
|
IRG7U50HF12A
|
Infineon Technologies | MOD IGBT 1200V 50A POWIR 34 | 0 | $0.00 | |
|
IRG7U200HF12B
|
Infineon Technologies | MOD IGBT 1200V 200A POWIR 62 | 0 | $0.00 | |
|
IRG7U150HF12B
|
Infineon Technologies | MOD IGBT 1200V 150A POWIR 62 | 0 | $0.00 |