IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
APT50GLQ65JU2
|
Microsemi Corporation | POWER MODULE - IGBT | 0 | $0.00 | |
VS-GB150YG120NT
|
Vishay / Semiconductor - Diodes Division | OUTPUT & SW MODULES - ECONO IGBT | 0 | $0.00 | |
|
VS-GB100YG120NT
|
Vishay / Semiconductor - Diodes Division | OUTPUT & SW MODULES - ECONO IGBT | 0 | $0.00 | |
|
FP75R07N2E4B11BOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 75A | 0 | $0.00 | |
|
FF600R12IS4FBOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 600A | 0 | $0.00 | |
|
FP50R07U1E4BPSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 50A | 0 | $0.00 | |
|
FP30R07U1E4BPSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 30A | 0 | $0.00 | |
|
FS100R07N3E4B11BOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 100A | 0 | $0.00 | |
|
FS100R07N3E4BOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 100A | 0 | $0.00 | |
|
FF800R17KF6CB2NOSA1
|
Infineon Technologies | IGBT MODULE VCES 1200V 800A | 0 | $0.00 |