IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
APT100GN120J
|
Microsemi Corporation | IGBT 1200V 153A 446W SOT227 | 0 | $33.47 | |
FS50R06W1E3BOMA1
|
Infineon Technologies | MOD IGBT LOW PWR EASY1B-1 | 0 | $33.45 | |
|
FS50R06W1E3B11BOMA1
|
Infineon Technologies | MOD IGBT LOW PWR EASY1B-2 | 0 | $33.45 | |
|
MIXA20W1200MC
|
IXYS | IGBT MODULE 1200V 20A HEX | 0 | $33.42 | |
CPV362M4U
|
Vishay / Semiconductor - Diodes Division | IGBT SIP MODULE 600V 3.9A IMS-2 | 0 | $33.35 | |
|
CPV362M4K
|
Vishay / Semiconductor - Diodes Division | IGBT SIP MODULE 600V 31 IMS-2 | 0 | $33.35 | |
CPV362M4F
|
Vishay / Semiconductor - Diodes Division | IGBT SIP MODULE 600V 8.8A IMS-2 | 0 | $33.35 | |
|
FS25R12W1T4B11BOMA1
|
Infineon Technologies | MOD IGBT LOW PWR EASY1B-2 | 0 | $33.19 | |
|
FP10R12W1T4B11BOMA1
|
Infineon Technologies | IGBT MODULE VCES 600V 100A | 0 | $32.92 | |
|
FP10R12W1T4BOMA1
|
Infineon Technologies | IGBT MODULE VCES 600V 100A | 0 | $32.34 |