IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
APTGTQ200SK65T3G
|
Microsemi Corporation | POWER MODULE - IGBT | 0 | $58.51 | |
APTGTQ200DA65T3G
|
Microsemi Corporation | POWER MODULE - IGBT | 0 | $58.51 | |
APTGTQ100DDA65T3G
|
Microsemi Corporation | POWER MODULE - IGBT | 0 | $58.51 | |
APTGT50SK170TG
|
Microsemi Corporation | IGBT 1700V 75A 312W SP4 | 0 | $58.48 | |
GSID080A120B1A5
|
Global Power Technologies Group | SILICON IGBT MODULES | 0 | $58.36 | |
APTCV50H60T3G
|
Microsemi Corporation | IGBT TRENCH FULL BRIDGE SP3 | 0 | $58.31 | |
MUBW15-12T7
|
IXYS | MODULE IGBT CBI E2 | 0 | $57.97 | |
MUBW10-12A7
|
IXYS | CONVERTER/BRAKE/INVERTER 2.3VCE | 0 | $57.95 | |
APTGL40H120T1G
|
Microsemi Corporation | MOD IGBT 1200V 65A SP1 | 0 | $57.86 | |
VS-70MT060WHTAPBF
|
Vishay / Semiconductor - Diodes Division | IGBT 600V 100A 347W MTP | 0 | $57.79 |
APTGTQ200SK65T3G