IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
F3L300R07PE4BOSA1
|
Infineon Technologies | IGBT MODULE VCES 650V 300A | 0 | $186.30 | |
IFS100B17N3E4PB11BPSA1
|
Infineon Technologies | MOD IGBT LOW PWR ECONO | 0 | $186.06 | |
APTGT300TL65G
|
Microsemi Corporation | IGBT 650V SP6C | 0 | $185.88 | |
APTGT100TA120TPG
|
Microsemi Corporation | MOD IGBT 1200V 140A SP6-P | 0 | $183.63 | |
VS-GA400TD60S
|
Vishay / Semiconductor - Diodes Division | IGBT 600V 750A 1563W INT-A-PAK | 0 | $183.46 | |
APTGL120TDU120TPG
|
Microsemi Corporation | MOD IGBT 1200V 140A SP6-P | 0 | $181.53 | |
APTGT200A170D3G
|
Microsemi Corporation | IGBT MODULE TRENCH PHASE LEG D3 | 0 | $181.24 | |
FD200R12PT4B6BOSA1
|
Infineon Technologies | IGBT MODULE VCES 1200V 200A | 0 | $181.13 | |
DF200R12PT4B6BOSA1
|
Infineon Technologies | IGBT MODULE VCES 1200V 200A | 0 | $181.13 | |
BYM600A170DN2HOSA1
|
Infineon Technologies | MOD IGBT MED POWER 62MM-2 | 0 | $180.01 |
F3L300R07PE4BOSA1