IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
VS-GB400TH120N
|
Vishay / Semiconductor - Diodes Division | IGBT 1200V 800A 2604W INT-A-PAK | 0 | $255.01 | |
|
IFF600B12ME4S8PB11BOSA1
|
Infineon Technologies | MEDIUM POWER ECONO | 0 | $250.37 | |
|
FF600R12ME4CPB11BPSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 600A | 0 | $249.59 | |
|
IFF600B12ME4B11BOSA1
|
Infineon Technologies | MEDIUM POWER ECONO | 0 | $246.04 | |
|
APTGT150H170G
|
Microsemi Corporation | IGBT MOD TRENCH FULL BRIDGE SP6 | 0 | $245.15 | |
|
CM200TU-5F
|
Powerex, Inc. | IGBT MOD 6PAC 250V 200A F SER | 0 | $242.45 | |
APTGT300DU170G
|
Microsemi Corporation | IGBT TRENCH DUAL SOURCE 1700V SP | 0 | $241.44 | |
APTGT300A170G
|
Microsemi Corporation | IGBT PHASE TRENCH FIELD STOP SP6 | 0 | $241.44 | |
|
FF450R17ME4PBOSA1
|
Infineon Technologies | MOD IGBT MED PWR ECONOD-3 | 0 | $241.00 | |
|
FF450R17ME4PB11BOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 450A | 0 | $241.00 |