IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
FZ2400R17HE4PB9HPSA1
|
Infineon Technologies | MODULE IGBT IHMB190-2 | 0 | $1015.33 | |
|
FZ800R12KS4B2NOSA1
|
Infineon Technologies | MODULE IGBT A-IHM130-1 | 0 | $1007.10 | |
|
FZ2400R17HP4B9HOSA2
|
Infineon Technologies | MODULE IGBT IHMB190-2 | 0 | $1006.96 | |
|
FD600R17KE3KB5NOSA1
|
Infineon Technologies | IGBT MODULE VCES 600V 600A | 0 | $1001.98 | |
|
FZ2400R17HE4B9HOSA2
|
Infineon Technologies | MODULE IGBT IHMB190-2 | 0 | $989.76 | |
|
FZ1600R17HP4B2BOSA2
|
Infineon Technologies | IGBT MODULE 1700V 1600A | 0 | $989.76 | |
|
FD800R17HP4KB2BOSA2
|
Infineon Technologies | IGBT MODULE VCES 1700V 800A | 0 | $977.49 | |
|
FZ2400R12HE4PB9HPSA1
|
Infineon Technologies | MODULE IGBT IHMB190-2 | 0 | $976.46 | |
|
FF800R17KP4B2NOSA2
|
Infineon Technologies | IGBT MODULE 1700V 800A | 0 | $973.73 | |
|
FF1200R12KE3NOSA1
|
Infineon Technologies | IGBT MODULE VCES 1200V 1200A | 0 | $968.16 |