RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
MRF8S18260HSR6
|
NXP USA Inc. | FET RF 2CH 65V 1.81GHZ NI1230S-8 | 0 | $0.00 | |
MRF8S18260HR6
|
NXP USA Inc. | FET RF 2CH 65V 1.81GHZ NI1230-8 | 0 | $0.00 | |
MRF8P20161HSR3
|
NXP USA Inc. | FET RF 2CH 65V 1.92GHZ NI-780S | 0 | $0.00 | |
MRF8S18260HSR5
|
NXP USA Inc. | FET RF 2CH 65V 1.81GHZ NI1230S-8 | 0 | $0.00 | |
MRF8S18260HR5
|
NXP USA Inc. | FET RF 2CH 65V 1.81GHZ NI1230-8 | 0 | $0.00 | |
BF1202WR,115
|
NXP USA Inc. | MOSFET 2N-CH 10V 30MA SOT343R | 0 | $0.00 | |
MRFE6VP61K25HSR6
|
NXP USA Inc. | FET RF 2CH 133V 230MHZ NI-1230S | 0 | $0.00 | |
|
|
NXP USA Inc. | FET RF 65V 2.3GHZ NI-780S | 0 | $0.00 | |
|
|
NXP USA Inc. | FET RF 65V 2.3GHZ NI-780S | 0 | $0.00 | |
|
|
NXP USA Inc. | FET RF 65V 2.3GHZ NI-780 | 0 | $0.00 |
MRF8S18260HSR6
MRF8P20161HSR3
BF1202WR,115
MRFE6VP61K25HSR6