RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
MRF8HP21080HSR3
|
NXP USA Inc. | FET RF 2CH 65V 2.17GHZ NI780S-4 | 0 | $0.00 | |
MRF8HP21080HR5
|
NXP USA Inc. | FET RF 2CH 65V 2.17GHZ NI780-4 | 0 | $0.00 | |
BLF8G22L-160BV,118
|
NXP USA Inc. | TRANSISTOR CDFM6 | 0 | $0.00 | |
|
BLF8G22L-160BV,112
|
NXP USA Inc. | TRANSISTOR CDFM6 | 0 | $0.00 | |
MRFE6VP8600HSR6
|
NXP USA Inc. | FET RF 2CH 130V 860MHZ NI1230S | 0 | $0.00 | |
MRFE6VP8600HR6
|
NXP USA Inc. | FET RF 2CH 130V 860MHZ NI1230H | 0 | $0.00 | |
BLF6G27LS-50BN,118
|
NXP USA Inc. | TRANSISTOR RF PWR LDMOS SOT1112B | 0 | $0.00 | |
|
BLF6G27LS-50BN,112
|
NXP USA Inc. | TRANSISTOR RF PWR LDMOS SOT1112B | 0 | $0.00 | |
|
MRF8P20165WHSR3
|
NXP USA Inc. | FET RF 2CH 65V 2.01GHZ NI780S4 | 0 | $0.00 | |
MRFE6VP6300HSR3
|
NXP USA Inc. | FET RF 2CH 130V 230MHZ NI780S-4 | 0 | $0.00 |