RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
MRFE6VP5600HR5
|
NXP USA Inc. | FET RF 2CH 130V 230MHZ NI1230 | 55 | $0.00 | |
|
|
NXP USA Inc. | 250W AF17 2450MHZ NI780 | 100 | $0.00 | |
AFT21H350W03SR6
|
NXP USA Inc. | FET RF 2CH 65V 2.11GHZ NI1230S | 150 | $0.00 | |
MRFE6VP61K25NR6
|
NXP USA Inc. | TRANS RF LDMOS 1250W 50V | 0 | $0.00 | |
BLF184XRGJ
|
Ampleon USA Inc. | RF FET LDMOS 135V 23DB SOT1214C | 90 | $0.00 | |
A2G35S200-01SR3
|
NXP USA Inc. | AIRFAST RF POWER GAN TRANSISTOR | 246 | $0.00 | |
CGHV35060MP
|
Cree Wolfspeed | RF MOSFET HEMT 50V 20TSSOP | 195 | $0.00 | |
MRF7S24250NR3
|
NXP USA Inc. | TRANS RF LDMOS 250W 32V | 149 | $0.00 | |
PTVA102001EA-V1-R0
|
Cree Wolfspeed | RF MOSFET TRANSISTORS | 30 | $0.00 | |
MRFX600HR5
|
NXP USA Inc. | TRANS LDMOS 600W 400 MHZ 65V | 46 | $0.00 |
MRFE6VP5600HR5
AFT21H350W03SR6
MRFE6VP61K25NR6
BLF184XRGJ
A2G35S200-01SR3
CGHV35060MP
MRF7S24250NR3
PTVA102001EA-V1-R0
MRFX600HR5