RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
BF998E6327HTSA1
|
Infineon Technologies | MOSFET N-CH 12V 200MA SOT-143 | 1291 | $0.00 | |
PTVA101K02EV-V1-R0
|
Cree Wolfspeed | IC AMP RF LDMOS H-36275-4 | 40 | $0.00 | |
MMRF1312HSR5
|
NXP USA Inc. | TRANS 900-1215MHZ 1000W 52V | 34 | $0.00 | |
MMRF1312HR5
|
NXP USA Inc. | TRANS 900-1215MHZ 1000W 52V | 51 | $0.00 | |
|
|
NXP USA Inc. | FET RF 110V 1.03GHZ NI-780H | 40 | $0.00 | |
MMRF2010NR1
|
NXP USA Inc. | RF MOSFET LDMOS 50V TO270WB-14 | 487 | $0.00 | |
MRF13750HR5
|
NXP USA Inc. | RF POWER LDMOS TRANSISTOR 750 W | 88 | $0.00 | |
MRFX1K80HR5
|
NXP USA Inc. | RF MOSFET LDMOS 65V NI-1230H-4S | 52 | $0.00 | |
MMRF5017HSR5
|
NXP USA Inc. | GAN 2.2GHZ 250W NI400S4S | 50 | $238.89 | |
BLF6G13LS-250PGJ
|
Ampleon USA Inc. | RF FET LDMOS 100V 17DB SOT1121E | 39 | $0.00 |
BF998E6327HTSA1
PTVA101K02EV-V1-R0
MMRF1312HSR5
MMRF1312HR5
MMRF2010NR1
MRFX1K80HR5
MMRF5017HSR5
BLF6G13LS-250PGJ