RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
MRFE6S9060NR1
|
NXP USA Inc. | FET RF 66V 880MHZ TO270-2 | 54 | $0.00 | |
BLM7G1822S-20PBY
|
Ampleon USA Inc. | RF FET LDMOS 65V 32.3DB SOT12111 | 53 | $0.00 | |
PTVA120251EA-V2-R0
|
Cree Wolfspeed | IC AMP RF LDMOS H-36265-2 | 38 | $0.00 | |
PD85035STR-E
|
STMicroelectronics | TRANS RF N-CH FET POWERSO-10RF | 58 | $0.00 | |
275-101N30A-00
|
IXYS-RF | RF MOSFET N-CHANNEL DE275 | 15 | $32.68 | |
MMRF1304NR1
|
NXP USA Inc. | FET RF 133V 512MHZ TO270-2 | 70 | $0.00 | |
PD20010TR-E
|
STMicroelectronics | TRANS N-CH 40V POWERSO-10RF FORM | 90 | $0.00 | |
PD55008S-E
|
STMicroelectronics | FET RF 40V 500MHZ PWRSO10 | 65 | $15.71 | |
|
|
NXP USA Inc. | FET RF 68V 1.96GHZ PLD-1.5 | 48 | $0.00 | |
RFM01U7P(TE12L,F)
|
Toshiba Semiconductor and Storage | MOSFET N-CH PW-MINI | 0 | $0.00 |
MRFE6S9060NR1
BLM7G1822S-20PBY
PTVA120251EA-V2-R0
PD85035STR-E
275-101N30A-00
PD20010TR-E
RFM01U7P(TE12L,F)