RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
MRF101AN-START
|
NXP USA Inc. | MRF101AN RF ESSENTIALS COMPONENT | 12 | $46.88 | |
BLP05H675XRGY
|
Ampleon USA Inc. | RF FET LDMOS 135V 27DB SOT12242 | 78 | $0.00 | |
BLP05H675XRY
|
Ampleon USA Inc. | RF FET LDMOS 135V 27DB SOT12232 | 90 | $0.00 | |
BLF6G38-10G,118
|
Ampleon USA Inc. | RF FET LDMOS 65V 14DB SOT975C | 31 | $0.00 | |
PTVA120501EA-V1-R0
|
Cree Wolfspeed | IC AMP RF LDMOS H-36265-2 | 33 | $0.00 | |
BLM8G0710S-30PBY
|
Ampleon USA Inc. | RF FET LDMOS 65V 35DB SOT12111 | 72 | $0.00 | |
BLM7G1822S-40ABGY
|
Ampleon USA Inc. | RF FET LDMOS 65V 31.5DB SOT12122 | 90 | $0.00 | |
BLP05H635XRGY
|
Ampleon USA Inc. | RF FET LDMOS 135V 27DB SOT12242 | 52 | $0.00 | |
BLP05H635XRY
|
Ampleon USA Inc. | RF FET LDMOS 135V 27DB SOT12232 | 86 | $0.00 | |
MRFE6VP5150NR1
|
NXP USA Inc. | FET RF 2CH 133V 230MHZ TO-270 | 54 | $0.00 |
MRF101AN-START
BLP05H675XRGY
BLP05H675XRY
BLF6G38-10G,118
PTVA120501EA-V1-R0
BLM8G0710S-30PBY
BLM7G1822S-40ABGY
BLP05H635XRY
MRFE6VP5150NR1