FET, MOSFET Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
SIA923AEDJ-T1-GE3
|
Vishay / Siliconix | MOSFET 2P-CH 20V 4.5A SC70-6L | 6009 | $0.00 | |
DMN2016LFG-7
|
Diodes Incorporated | MOSFET 2N-CH 20V 5.2A 8UDFN | 18000 | $0.00 | |
QS6J11TR
|
ROHM Semiconductor | MOSFET 2P-CH 12V 2A TSMT6 | 8185 | $0.00 | |
SIA913ADJ-T1-GE3
|
Vishay / Siliconix | MOSFET 2P-CH 12V 4.5A SC70-6 | 3991 | $0.00 | |
SI5513CDC-T1-E3
|
Vishay / Siliconix | MOSFET N/P-CH 20V 4A 1206-8 | 6302 | $0.00 | |
SI5513CDC-T1-GE3
|
Vishay / Siliconix | MOSFET N/P-CH 20V 4A 1206-8 | 10559 | $0.00 | |
QH8MA2TCR
|
ROHM Semiconductor | MOSFET N/P-CH 30V 4.5A/3A TSMT8 | 3114 | $0.00 | |
DMG8601UFG-7
|
Diodes Incorporated | MOSFET 2N-CH 20V 6.1A DFN | 5756 | $0.00 | |
SIA907EDJT-T1-GE3
|
Vishay / Siliconix | MOSFET 2P-CH 20V 4.5A SC-70-6L | 5490 | $0.00 | |
DMC3016LSD-13
|
Diodes Incorporated | MOSFET N/P-CH 30V 8.2A/6.2A 8SO | 6759 | $0.00 |
SIA923AEDJ-T1-GE3
DMN2016LFG-7
QS6J11TR
SI5513CDC-T1-E3
QH8MA2TCR
DMC3016LSD-13