FET, MOSFET Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
BSO220N03MDGXUMA1
|
Infineon Technologies | MOSFET 2N-CH 30V 6A 8DSO | 39896 | $0.00 | |
DMN4027SSD-13
|
Diodes Incorporated | MOSFET 2N-CH 40V 5.4A 8SO | 10748 | $0.00 | |
UT6MA3TCR
|
ROHM Semiconductor | 20V NCH+PCH MIDDLE POWER MOSFET | 7800 | $0.00 | |
SI5515CDC-T1-E3
|
Vishay / Siliconix | MOSFET N/P-CH 20V 4A 1206-8 | 3000 | $0.00 | |
FDMA3028N
|
ON Semiconductor | MOSFET 2N-CH 30V 3.8A 6MICROFET | 5725 | $0.00 | |
DMN2011UFX-7
|
Diodes Incorporated | MOSFET 2N-CH 20V 12.2A DFN2050-4 | 12000 | $0.00 | |
IRF7530TRPBF
|
Infineon Technologies | MOSFET 2N-CH 20V 5.4A MICRO8 | 20482 | $0.00 | |
NTHD4502NT1G
|
ON Semiconductor | MOSFET 2N-CH 30V 2.2A CHIPFET | 8248 | $0.00 | |
DMC3028LSDXQ-13
|
Diodes Incorporated | MOSFET N/P-CH 30V 8SOIC | 2500 | $0.00 | |
QS8M11TCR
|
ROHM Semiconductor | MOSFET N/P-CH 30V 3.5A TSMT8 | 3000 | $0.76 |
BSO220N03MDGXUMA1
DMN4027SSD-13
UT6MA3TCR
SI5515CDC-T1-E3
FDMA3028N
DMN2011UFX-7
IRF7530TRPBF
NTHD4502NT1G
QS8M11TCR