FET, MOSFET Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
TSM3911DCX6 RFG
|
Taiwan Semiconductor Corporation | MOSFET 2 P-CH 20V 2.2A SOT26 | 27405 | $0.00 | |
AON3611
|
Alpha & Omega Semiconductor Inc. | MOSFET N/P-CH 30V 5A/6A 8DFN | 7356 | $0.00 | |
DMP2100UFU-7
|
Diodes Incorporated | MOSFET 2P-CH 20V U-DFN2030-6 | 8617 | $0.00 | |
TSM250N02DCQ RFG
|
Taiwan Semiconductor Corporation | MOSFET 2 N-CH 20V 5.8A 6TDFN | 11586 | $0.00 | |
SI1035X-T1-GE3
|
Vishay / Siliconix | MOSFET N/P-CH 20V SC-89 | 10772 | $0.00 | |
SSM6L61NU,LF
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 4A UDFN6 | 5503 | $0.00 | |
SSM6P49NU,LF
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-1Y1A | 3009 | $0.00 | |
SM6K2T110
|
ROHM Semiconductor | MOSFET 2N-CH 60V 0.2A SOT-457 | 4765 | $0.00 | |
DMN2050LFDB-13
|
Diodes Incorporated | MOSFET 2N-CH 20V 3.3A 6UDFN | 19902 | $0.00 | |
DMN1029UFDB-7
|
Diodes Incorporated | MOSFET 2N-CH 12V 5.6A 6UDFN | 4878 | $0.00 |
TSM3911DCX6 RFG
AON3611
DMP2100UFU-7
TSM250N02DCQ RFG
SI1035X-T1-GE3
SSM6L61NU,LF
SM6K2T110
DMN2050LFDB-13