Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
90025HS Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
80279H Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
80277H Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
80275H Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
76020H Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
76016S Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
75109A Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
75101H Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
75096A Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
75086H Microsemi Corporation RF POWER TRANSISTOR 0 $0.00