Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number	Manufacturer	Description	Quantity	Price	Option
MS1801	Microsemi Corporation	RF POWER TRANSISTOR	0	$0.00	RFQ
MS1701	Microsemi Corporation	RF POWER TRANSISTOR	0	$0.00	RFQ
MS1612	Microsemi Corporation	RF POWER TRANSISTOR	0	$0.00	RFQ
MS1087T	Microsemi Corporation	RF POWER TRANSISTOR	0	$0.00	RFQ
MS1076C	Microsemi Corporation	RF POWER TRANSISTOR	0	$0.00	RFQ
MS1076A	Microsemi Corporation	RF POWER TRANSISTOR	0	$0.00	RFQ
MS1030DE	Microsemi Corporation	RF POWER TRANSISTOR	0	$0.00	RFQ
MS1030	Microsemi Corporation	RF POWER TRANSISTOR	0	$0.00	RFQ
MS1019	Microsemi Corporation	RF POWER TRANSISTOR	0	$0.00	RFQ
MS1015D	Microsemi Corporation	RF POWER TRANSISTOR	0	$0.00	RFQ