Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
64054H Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
64020H Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
64017H Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
61045 Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
61032Q Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
60099H Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
46007T Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
44086H Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
44022H Microsemi Corporation RF POWER TRANSISTOR 0 $0.00
42108HS Microsemi Corporation RF POWER TRANSISTOR 0 $0.00