Microsemi Corporation APTGTQ100SK65T1G

Manufacturer
Microsemi Corporation
Model
APTGTQ100SK65T1G
Datasheet
APTGTQ100SK65T1G PDF
Description
POWER MODULE - IGBT
Availability
OUT OF STOCK

$43.39

Product Detail

Attribute Name Attribute Value
Power - Max 208W
Configuration Half Bridge
Mounting Type Chassis Mount
NTC Thermistor Yes
Package / Case SP1
Operating Temperature -40°C ~ 150°C (TJ)
Supplier Device Package SP1
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
Input Standard
Current - Collector (Ic) (Max) 55A
Series -
Input Capacitance (Cies) @ Vce 2.5nF @ 25V
IGBT Type Trench Field Stop
Current - Collector Cutoff (Max) 250µA
Part Status Active
Voltage - Collector Emitter Breakdown (Max) 1200V

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