Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
GT50J121(Q)
|
Toshiba Semiconductor and Storage | IGBT 600V 50A 240W TO3P LH | 0 | $0.00 | |
GT8G133(TE12L,Q)
|
Toshiba Semiconductor and Storage | IGBT 400V 600MW 8TSSOP | 0 | $0.00 | |
|
GT60N321(Q)
|
Toshiba Semiconductor and Storage | IGBT 1000V 60A 170W TO3P LH | 0 | $0.00 | |
GT10J312(Q)
|
Toshiba Semiconductor and Storage | IGBT 600V 10A 60W TO220SM | 0 | $0.00 | |
GT10G131(TE12L,Q)
|
Toshiba Semiconductor and Storage | IGBT 400V 1W 8-SOIC | 0 | $0.00 | |
FGA50N100BNTTU
|
ON Semiconductor | IGBT 1000V 50A 156W TO3P | 0 | $0.00 | |
STGW45NC60WD
|
STMicroelectronics | IGBT 600V 90A 285W TO247 | 0 | $0.00 | |
STGB18N40LZ-1
|
STMicroelectronics | IGBT 420V 30A 150W I2PAK | 0 | $0.00 | |
FGH30N120FTDTU
|
ON Semiconductor | IGBT 1200V 60A 339W TO247 | 0 | $0.00 | |
IRGSL4062DPBF
|
Infineon Technologies | IGBT 600V 48A 250W TO262 | 0 | $0.00 |