Toshiba Semiconductor and Storage GT10J312(Q)

Manufacturer
Toshiba Semiconductor and Storage
Model
GT10J312(Q)
Datasheet
GT10J312(Q) PDF
Description
IGBT 600V 10A 60W TO220SM
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
Input Type Standard
Reverse Recovery Time (trr) 2.5µs
Part Status Obsolete
Current - Collector (Ic) (Max) 60A
Power - Max 170W
Current - Collector Pulsed (Icm) 120A
Mounting Type Through Hole
Voltage - Collector Emitter Breakdown (Max) 1000V
Package / Case TO-3PL
Test Condition -
Base Part Number GT60
Switching Energy -
Td (on/off) @ 25°C 330ns/700ns
Series -
Operating Temperature 150°C (TJ)
IGBT Type -
Supplier Device Package TO-3P(LH)
Packaging Tube
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A

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