Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
APT45GR65BSCD10
|
Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | 0 | $0.00 | |
IRGIB4640DPBF
|
Infineon Technologies | IGBT 600V 65A 250W TO220 | 0 | $0.00 | |
IRGIB4630DPBF
|
Infineon Technologies | IGBT 600V 47A 206W TO220 | 0 | $0.00 | |
IRGR4607DTRPBF
|
Infineon Technologies | IGBT 600V 11A 58W DPAK | 0 | $0.00 | |
IRG8P75N65UD1PBF
|
Infineon Technologies | G8 650V 75A CO-PAK-247 | 0 | $0.00 | |
IRG8P75N65UD1-EPBF
|
Infineon Technologies | G8 650V 75A CO-PAK-247 | 0 | $0.00 | |
|
IRG8P45N65UD1PBF
|
Infineon Technologies | G8 650V 45A CO-PAK-247 | 0 | $0.00 | |
|
IRG8P45N65UD1-EPBF
|
Infineon Technologies | G8 650V 45A CO-PAK-247 | 0 | $0.00 | |
|
IRG8CH42K10F
|
Infineon Technologies | IGBT 1200V 40A DIE | 0 | $0.00 | |
|
IRG8CH42K10D
|
Infineon Technologies | IGBT 1200V 40A DIE | 0 | $0.00 |