Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
IRGP4263D1PBF Infineon Technologies IGBT 600V TO247 COPAK 0 $0.00
IRGP4269D-EPBF Infineon Technologies IGBT 600V TO247 COPAK 0 $0.00
IRGPS47160DPBF Infineon Technologies IGBT 600V TO247 COPAK 0 $0.00
IRGIB4615DPBF Infineon Technologies IGBT 600V FULLPAK220 COPAK 0 $0.00
IRGIB4610DPBF Infineon Technologies IGBT 600V FULLPAK220 COPAK 0 $0.00
IRGIB4607DPBF Infineon Technologies IGBT 600V FULLPAK220 COPAK 0 $0.00
IRGH4607DPBF Infineon Technologies IGBT 600V 8PQFN 0 $0.00
IRGH4610DPBF Infineon Technologies IGBT 600V 8PQFN 0 $0.00
APT70GR65B2SCD30 Microsemi Corporation INSULATED GATE BIPOLAR TRANSISTO 0 $0.00
APT45GR65SSCD10 Microsemi Corporation INSULATED GATE BIPOLAR TRANSISTO 0 $0.00