Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
IGB50N65S5ATMA1
|
Infineon Technologies | IGBT PRODUCTS | 975 | $0.00 | |
IKD10N60RFATMA1
|
Infineon Technologies | IGBT 600V 20A 150W PG-TO252-3 | 2053 | $0.00 | |
IGB10N60TATMA1
|
Infineon Technologies | IGBT 600V 20A 110W TO263-3 | 1991 | $0.00 | |
IKD06N60RFATMA1
|
Infineon Technologies | IGBT 600V 12A 100W PG-TO252-3 | 3150 | $0.00 | |
IKD06N60RATMA1
|
Infineon Technologies | IGBT 600V 12A TO252-3 | 2257 | $0.00 | |
IKD03N60RFATMA1
|
Infineon Technologies | IGBT 600V 6.5A TO252-3 | 2296 | $0.00 | |
NGTB05N60R2DT4G
|
ON Semiconductor | IGBT 5A 600V DPAK | 0 | $0.00 | |
IKD03N60RF
|
Infineon Technologies | IGBT 600V 5A 53.6W TO252-3 | 2229 | $0.00 | |
IXBA14N300HV
|
IXYS | REVERSE CONDUCTING IGBT | 873 | $40.19 | |
STGY80H65DFB
|
STMicroelectronics | IGBT 650V 120A 469W MAX247 | 362 | $14.31 |
IGB50N65S5ATMA1
IKD10N60RFATMA1
NGTB05N60R2DT4G
IXBA14N300HV
STGY80H65DFB