Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
IXYH24N170C IXYS IGBT 1.7KV 58A TO247-3 57 $10.71
IXYH20N120C3D1 IXYS IGBT 1200V 36A 230W TO-247AD 30 $10.32
APT35GN120BG Microsemi Corporation IGBT 1200V 94A 379W TO247 40 $9.71
APT40GR120B Microsemi Corporation IGBT 1200V 88A 500W TO247 90 $8.95
IXYH16N170C IXYS IGBT 1.7KV 40A TO247 37 $8.82
IXYH10N170C IXYS IGBT 1.7KV 36A TO247 57 $8.17
IXXH60N65B4H1 IXYS IGBT 650V 116A 380W TO247AD 30 $8.00
APT35GA90BD15 Microsemi Corporation IGBT 900V 63A 290W TO247 77 $7.77
IXGT32N120A3 IXYS IGBT 1200V 75A 300W TO268 51 $7.95
IGW75N60TFKSA1 Infineon Technologies IGBT 600V 150A 428W TO247-3 48 $7.03