Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
MMIX1X200N60B3H1 IXYS IGBT 600V 175A 520W SMPD 40 $36.74
IXBH20N300 IXYS IGBT 3000V 50A 250W TO247 41 $34.25
IXBT12N300 IXYS IGBT 3000V 30A 160W TO268 46 $26.75
APT200GN60B2G Microsemi Corporation IGBT 600V 283A 682W TO247 30 $23.05
APT45GP120B2DQ2G Microsemi Corporation IGBT 1200V 113A 625W TMAX 16 $21.33
IXXK200N65B4 IXYS IGBT 650V 370A 1150W TO264 75 $17.97
APT100GN60LDQ4G Microsemi Corporation IGBT 600V 229A 625W TO264 40 $15.14
IXBT16N170A IXYS IGBT 1700V 16A 150W TO268 75 $13.12
IXYH75N65C3H1 IXYS IGBT 650V 170A 750W TO247 30 $11.91
APT80GA90B Microsemi Corporation IGBT 900V 145A 625W TO247 98 $11.58