Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
STGW10M65DF2
|
STMicroelectronics | TRENCH GATE FIELD-STOP IGBT M SE | 4 | $1.86 | |
STGB30V60F
|
STMicroelectronics | TRENCH GATE FIELD-STOP IGBT, V S | 0 | $0.00 | |
IXYN50N170CV1
|
IXYS | IGBT 1700V 120A SOT227B | 4 | $41.53 | |
IXBX25N250
|
IXYS | IGBT 2500V 55A 300W PLUS247 | 0 | $33.84 | |
APT80GA60LD40
|
Microsemi Corporation | IGBT 600V 143A 625W TO264 | 0 | $13.79 | |
APT25GP120BDQ1G
|
Microsemi Corporation | IGBT 1200V 69A 417W TO247 | 0 | $13.07 | |
APT50GT60BRDQ2G
|
Microsemi Corporation | IGBT 600V 110A 446W TO247 | 0 | $8.54 | |
STGW80H65DFB
|
STMicroelectronics | IGBT 650V 120A 469W TO-247 | 0 | $7.50 | |
APT25GT120BRG
|
Microsemi Corporation | IGBT 1200V 54A 347W TO247 | 0 | $7.47 | |
STGW30H60DFB
|
STMicroelectronics | IGBT 600V 60A 260W TO247 | 0 | $3.68 |
STGW10M65DF2
STGB30V60F
IXYN50N170CV1
IXBX25N250
APT80GA60LD40
APT25GP120BDQ1G
STGW80H65DFB