Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
APT100GN120B2G Microsemi Corporation IGBT 1200V 245A 960W TMAX 0 $27.41
IXYH25N250CHV IXYS IGBT 2500V 235A TO-247HV 3 $24.58
APT45GP120BG Microsemi Corporation IGBT 1200V 100A 625W TO247 20 $20.22
APT33GF120B2RDQ2G Microsemi Corporation IGBT 1200V 64A 357W TMAX 20 $18.42
APT85GR120B2 Microsemi Corporation IGBT 1200V 170A 962W TO247 1 $16.53
IXYH30N170C IXYS 1700V/108A HIGH VOLTAGE XPT IGB 3 $12.75
APT35GN120L2DQ2G Microsemi Corporation IGBT 1200V 94A 379W TO264 0 $12.39
IXYH40N120C3D1 IXYS IGBT 1200V 64A 480W TO247 13 $11.82
IXYH16N170CV1 IXYS IGBT 1.7KV 40A TO247 18 $11.57
IKZ75N65EL5XKSA1 Infineon Technologies IGBT 650V 100A TO247-4 0 $9.64