Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
|
|
Microsemi Corporation | IGBT 1200V 245A 960W TMAX | 0 | $27.41 | |
IXYH25N250CHV
|
IXYS | IGBT 2500V 235A TO-247HV | 3 | $24.58 | |
APT45GP120BG
|
Microsemi Corporation | IGBT 1200V 100A 625W TO247 | 20 | $20.22 | |
|
|
Microsemi Corporation | IGBT 1200V 64A 357W TMAX | 20 | $18.42 | |
APT85GR120B2
|
Microsemi Corporation | IGBT 1200V 170A 962W TO247 | 1 | $16.53 | |
IXYH30N170C
|
IXYS | 1700V/108A HIGH VOLTAGE XPT IGB | 3 | $12.75 | |
|
|
Microsemi Corporation | IGBT 1200V 94A 379W TO264 | 0 | $12.39 | |
IXYH40N120C3D1
|
IXYS | IGBT 1200V 64A 480W TO247 | 13 | $11.82 | |
IXYH16N170CV1
|
IXYS | IGBT 1.7KV 40A TO247 | 18 | $11.57 | |
|
|
Infineon Technologies | IGBT 650V 100A TO247-4 | 0 | $9.64 |
IXYH25N250CHV
APT45GP120BG
APT85GR120B2
IXYH30N170C
IXYH16N170CV1