Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
IXGP15N120B
|
IXYS | IGBT 1200V 30A 150W TO220AB | 0 | $5.08 | |
IXGA24N120C3
|
IXYS | IGBT 1200V 48A 250W TO263 | 0 | $5.08 | |
IXYH50N65C3
|
IXYS | IGBT 650V 130A 600W TO247 | 0 | $5.08 | |
IXYH40N90C3
|
IXYS | IGBT 900V 105A 600W TO247 | 0 | $5.03 | |
IXBF9N160G
|
IXYS | IGBT 1600V 7A 70W I4PAC | 0 | $4.98 | |
RJH60D5BDPQ-E0#T2
|
Renesas Electronics America | IGBT 600V 75A 200W TO-247 | 8 | $5.26 | |
IXXH30N60C3D1
|
IXYS | IGBT 600V 60A 270W TO247 | 0 | $4.96 | |
IRG4PC60UPBF
|
Infineon Technologies | IGBT 600V 75A 520W TO247AC | 0 | $5.06 | |
IXGQ20N120BD1
|
IXYS | IGBT 1200V 40A 190W TO3P | 0 | $4.96 | |
IXGA4N100
|
IXYS | IGBT 1000V 8A 40W TO263AA | 0 | $4.96 |
IXGP15N120B
IXGA24N120C3
IXYH50N65C3
IXBF9N160G
RJH60D5BDPQ-E0#T2
IXXH30N60C3D1
IRG4PC60UPBF
IXGQ20N120BD1