Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
IXYA50N65C3
|
IXYS | IGBT 650V 130A 600W TO263 | 0 | $5.43 | |
IXYH50N65C3H1
|
IXYS | IGBT 650V 130A 600W TO247 | 0 | $5.43 | |
IXXH60N65C4
|
IXYS | IGBT 650V 118A 455W TO247AD | 0 | $5.43 | |
IXDP35N60B
|
IXYS | IGBT 600V 60A 250W TO220AB | 0 | $5.42 | |
IXGP20N120B
|
IXYS | IGBT 1200V 40A 190W TO220 | 0 | $5.40 | |
FGH75N60SFTU
|
ON Semiconductor | IGBT 600V 150A 452W TO247 | 0 | $5.40 | |
IXYH20N120C3
|
IXYS | IGBT 1200V 40A 278W TO-247AD | 0 | $5.39 | |
IXYH40N65B3D1
|
IXYS | IGBT | 0 | $5.38 | |
IXYH40N65C3D1
|
IXYS | IGBT 650V 80A 300W TO247 | 0 | $5.38 | |
IXYH30N65C3H1
|
IXYS | IGBT 650V 60A 270W TO247 | 0 | $5.38 |
IXYA50N65C3
IXYH50N65C3H1
IXXH60N65C4
IXDP35N60B
FGH75N60SFTU
IXYH40N65B3D1