Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number	Manufacturer	Description	Quantity	Price	Option
IXGR55N120A3H1	IXYS	IGBT 1200V 70A 200W ISOPLUS247	0	$14.18	RFQ
IXGA30N60C3C1	IXYS	IGBT 600V 60A 220W TO263	0	$13.77	RFQ
IXYH12N250C	IXYS	IGBT 2500V 28A TO247AD	0	$13.73	RFQ
APT80GA90LD40	Microsemi Corporation	IGBT 900V 145A 625W TO-264	0	$13.69	RFQ
IXGP30N60C3C1	IXYS	IGBT 600V 60A 220W TO220	0	$13.68	RFQ
APT102GA60L	Microsemi Corporation	IGBT 600V 183A 780W TO264	0	$13.67	RFQ
IXYK140N90C3	IXYS	IGBT 900V 310A 1630W TO264	0	$13.60	RFQ
IXGH24N170	IXYS	IGBT 1700V 50A 250W TO247AD	0	$13.52	RFQ
IGC70T120T8RQ	Infineon Technologies	IGBT 1200V 75A DIE	0	$13.50	RFQ
IXYX140N90C3	IXYS	IGBT 900V 310A 1630W TO247	0	$13.36	RFQ