Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number	Manufacturer	Description	Quantity	Price	Option
IXGK50N120C3H1	IXYS	IGBT 1200V 95A 460W TO264	0	$15.54	RFQ
IXGT40N120B2D1	IXYS	IGBT 1200V 75A 380W TO268	0	$14.67	RFQ
IXYX100N65B3D1	IXYS	IGBT 650V 188A 1150W PLUS247	0	$14.61	RFQ
APT75GN120B2G	Microsemi Corporation	IGBT 1200V 200A 833W TMAX	0	$14.60	RFQ
IXGX35N120BD1	IXYS	IGBT 1200V 70A 350W PLUS247	0	$14.57	RFQ
IXGR35N120B	IXYS	IGBT 1200V 70A 200W ISOPLUS247	0	$14.51	RFQ
IXGK35N120BD1	IXYS	IGBT 1200V 70A 350W TO264AA	0	$14.47	RFQ
IXA30RG1200DHG-TUB	IXYS	IGBT PHASELEG 1200V 30A SMPD	0	$14.47	RFQ
IXXX100N60B3H1	IXYS	IGBT 600V 200A 695W TO247	0	$14.43	RFQ
APT50GP60B2DQ2G	Microsemi Corporation	IGBT 600V 150A 625W TMAX	0	$14.33	RFQ