Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number	Manufacturer	Description	Quantity	Price	Option
IXBH42N170A	IXYS	IGBT 1700V 42A 357W TO247	0	$18.83	RFQ
SIGC109T120R3LEX1SA2	Infineon Technologies	IGBT 1200V 100A DIE	0	$18.78	RFQ
IXXK200N60C3	IXYS	IGBT 600V 340A 1630W TO264	0	$18.32	RFQ
IXXK200N60B3	IXYS	IGBT 600V 380A 1630W TO264	0	$18.32	RFQ
APT35GP120B2DQ2G	Microsemi Corporation	IGBT 1200V 96A 543W TMAX	0	$18.25	RFQ
IXGK82N120B3	IXYS	IGBT 1200V 230A 1250W TO264	0	$18.17	RFQ
IXGK82N120A3	IXYS	IGBT 1200V 260A 1250W TO264	0	$18.17	RFQ
IXYX50N170C	IXYS	IGBT 1700V 178A PLUS247	0	$18.03	RFQ
IXYH12N250CV1HV	IXYS	IGBT 2500V 28A TO247HV	0	$18.01	RFQ
APT150GN60B2G	Microsemi Corporation	IGBT 600V 220A 536W SOT227	0	$17.91	RFQ