Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
IXYH16N250CV1HV IXYS IGBT 2500V 35A TO247HV 0 $20.12
IXGT20N120 IXYS IGBT 1200V 40A 150W TO268 0 $19.99
APT50GT120B2RDLG Microsemi Corporation IGBT 1200V 106A 694W TO-247 8 $19.91
IXYX100N120C3 IXYS IGBT 1200V 188A 1150W PLUS247 0 $19.78
IXYX100N120B3 IXYS IGBT 1200V 188A 1150W PLUS247 2 $19.78
IXGB200N60B3 IXYS IGBT 600V 75A 1250W PLUS264 0 $19.77
IXBT24N170 IXYS IGBT 1700V 60A 250W TO268 0 $19.76
APT50GF120B2RG Microsemi Corporation IGBT 1200V 135A 781W TMAX 0 $18.98
IXBT42N170A IXYS IGBT 1700V 42A 357W TO268 0 $18.96
APT65GP60L2DQ2G Microsemi Corporation IGBT 600V 198A 833W TO264 0 $18.90