Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
IXSH10N60B2D1
|
IXYS | IGBT 600V 20A 100W TO247 | 0 | $0.00 | |
IXSA10N60B2D1
|
IXYS | IGBT 600V 20A 100W TO263 | 0 | $0.00 | |
IXSP10N60B2D1
|
IXYS | IGBT 600V 20A 100W TO220AB | 0 | $0.00 | |
ISL9V3040S3S
|
ON Semiconductor | IGBT 430V 21A 150W TO263AB | 0 | $0.00 | |
ISL9V3040D3S
|
ON Semiconductor | IGBT 430V 21A 150W TO252AA | 0 | $0.00 | |
ISL9V2040S3S
|
ON Semiconductor | IGBT 430V 10A 130W TO263AB | 0 | $0.00 | |
ISL9V2040D3S
|
ON Semiconductor | IGBT 430V 10A 130W TO252AA | 0 | $0.00 | |
FGB40N6S2
|
ON Semiconductor | IGBT 600V 75A 290W TO263AB | 0 | $0.00 | |
FGB30N6S2T
|
ON Semiconductor | IGBT 600V 45A 167W TO263AB | 0 | $0.00 | |
ISL9V5036S3
|
ON Semiconductor | IGBT 390V 46A 250W TO262AA | 0 | $0.00 |
IXSH10N60B2D1
IXSA10N60B2D1
IXSP10N60B2D1
ISL9V3040S3S
ISL9V3040D3S
ISL9V5036S3