Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
NGB18N40CLBT4G
|
ON Semiconductor | IGBT 430V 18A 115W D2PAK | 0 | $0.00 | |
MGP15N40CLG
|
ON Semiconductor | IGBT 440V 15A 150W TO220AB | 0 | $0.00 | |
IXST40N60B2D1
|
IXYS | IGBT 600V 48A TO268 | 0 | $0.00 | |
IXSH40N60B2D1
|
IXYS | IGBT 600V 48A TO247 | 0 | $0.00 | |
IXST30N60B2D1
|
IXYS | IGBT 600V 48A 250W TO268 | 0 | $0.00 | |
IXSH30N60B2D1
|
IXYS | IGBT 600V 48A 250W TO247 | 0 | $0.00 | |
IXSQ20N60B2D1
|
IXYS | IGBT 600V 35A 190W TO3P | 0 | $0.00 | |
IXSH20N60B2D1
|
IXYS | IGBT 600V 35A 190W TO247 | 0 | $0.00 | |
IXSA20N60B2D1
|
IXYS | IGBT 600V 35A 190W TO263 | 0 | $0.00 | |
IXSP20N60B2D1
|
IXYS | IGBT 600V 35A 190W TO220 | 0 | $0.00 |
NGB18N40CLBT4G
MGP15N40CLG
IXST40N60B2D1
IXSH40N60B2D1
IXST30N60B2D1
IXSQ20N60B2D1
IXSA20N60B2D1
IXSP20N60B2D1