Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
NGB8206NTF4G Littelfuse Inc. IGBT IGNIT NCHAN 20A 400V D2PAK3 0 $0.00
NGB8206NTF4 ON Semiconductor IGBT 390V 20A 150W D2PAK3 0 $0.00
NGB8206NT4 ON Semiconductor IGBT 390V 20A 150W D2PAK 0 $0.00
NGB8206NG ON Semiconductor IGBT 390V 20A 150W D2PAK 0 $0.00
NGB8206N ON Semiconductor IGBT 390V 20A 150W D2PAK 0 $0.00
STGP30NC60W STMicroelectronics IGBT 600V 60A 200W TO220 0 $0.00
ISL9V5045S3S ON Semiconductor IGBT 480V 51A 300W D2PAK 0 $0.00
IRGP4065DPBF Infineon Technologies IGBT 300V 70A 160W TO247AC 0 $0.00
IRGP4055DPBF Infineon Technologies IGBT 300V 110A 255W TO247AC 0 $0.00
IRGS4065PBF Infineon Technologies IGBT 300V 70A 178W D2PAK 0 $0.00