Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
APT15GP90KG Microsemi Corporation IGBT 900V 43A 250W TO220 0 $0.00
APT15GP90BG Microsemi Corporation IGBT 900V 43A 250W TO247 0 $0.00
APT15GP60KG Microsemi Corporation IGBT 600V 56A 250W TO220 0 $0.00
APT15GN120KG Microsemi Corporation IGBT 1200V 45A 195W TO220 0 $0.00
APT13GP120KG Microsemi Corporation IGBT 1200V 41A 250W TO220 0 $0.00
APT11GP60BDQBG Microsemi Corporation IGBT 600V 41A 187W TO247 0 $0.00
APT11GF120KRG Microsemi Corporation IGBT 1200V 25A 156W TO220 0 $0.00
APT11GF120BRDQ1G Microsemi Corporation IGBT 1200V 25A 156W TO247 0 $0.00
NGD8205NT4 ON Semiconductor IGBT 390V 20A 125W DPAK 0 $0.00
NGD8201NT4 ON Semiconductor IGBT 440V 20A 125W DPAK 0 $0.00