RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
MRF7S27130HR3
|
NXP USA Inc. | FET RF 65V 2.7GHZ NI-780 | 0 | $0.00 | |
MRF7S21150HSR3
|
NXP USA Inc. | FET RF 65V 2.17GHZ NI-780S | 0 | $0.00 | |
|
MRF7S21150HR5
|
NXP USA Inc. | FET RF 65V 2.17GHZ NI-780 | 0 | $0.00 | |
|
MRF7S21150HR3
|
NXP USA Inc. | FET RF 65V 2.17GHZ NI-780 | 0 | $0.00 | |
|
MRF7S21110HSR5
|
NXP USA Inc. | FET RF 65V 2.17GHZ NI-780S | 0 | $0.00 | |
|
MRF7S21110HSR3
|
NXP USA Inc. | FET RF 65V 2.17GHZ NI-780S | 0 | $0.00 | |
|
MRF7S21110HR5
|
NXP USA Inc. | FET RF 65V 2.17GHZ NI-780 | 0 | $0.00 | |
|
MRF7S21110HR3
|
NXP USA Inc. | FET RF 65V 2.17GHZ NI-780 | 0 | $0.00 | |
|
MRF7S21080HSR5
|
NXP USA Inc. | FET RF 65V 2.17GHZ NI-780S | 0 | $0.00 | |
|
MRF7S21080HSR3
|
NXP USA Inc. | FET RF 65V 2.17GHZ NI-780S | 0 | $0.00 |