RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
BLC9G20LS-120VY
|
Ampleon USA Inc. | RF FET LDMOS 65V 19.2DB SOT12753 | 100 | $55.72 | |
MRFE6VP5300GNR1
|
NXP USA Inc. | FET RF 2CH 133V 230MHZ TO-270 GW | 134 | $0.00 | |
CGHV1F025S
|
Cree Wolfspeed | RF MOSFET HEMT 40V 12DFN | 146 | $0.00 | |
BLC8G27LS-210PVY
|
Ampleon USA Inc. | RF FET LDMOS 65V 17DB SOT12513 | 92 | $0.00 | |
MRF085HR5
|
NXP USA Inc. | RF MOSFET LDMOS 50V NI-650H-4L | 60 | $139.35 | |
A2T26H300-24SR6
|
NXP USA Inc. | IC TRANS RF LDMOS | 135 | $147.38 | |
MRFE6VP61K25HSR5
|
NXP USA Inc. | FET RF 2CH 133V 230MHZ NI-1230S | 32 | $175.69 | |
MRFE6VP8600HR5
|
NXP USA Inc. | FET RF 2CH 130V 860MHZ NI-1230 | 0 | $253.88 | |
AFV10700HSR5
|
NXP USA Inc. | AIRFAST RF POWER LDMOS TRANSISTO | 50 | $425.27 | |
AFV10700HR5
|
NXP USA Inc. | RF MOSFET LDMOS DL 50V NI-780-4 | 44 | $424.29 |
BLC9G20LS-120VY
MRFE6VP5300GNR1
CGHV1F025S
BLC8G27LS-210PVY
MRF085HR5
A2T26H300-24SR6
MRFE6VP61K25HSR5
MRFE6VP8600HR5
AFV10700HSR5
AFV10700HR5