RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
PTFC262808SVV1XWSA1
|
Infineon Technologies | IC AMP RF LDMOS H-37275G-6/2 | 0 | $0.00 | |
|
PTFA220081MV4S500XUMA1
|
Infineon Technologies | IC AMP RF LDMOS 10-SON | 0 | $0.00 | |
MRF7S18170HR3
|
NXP USA Inc. | FET RF 65V 1.81GHZ NI-880 | 0 | $0.00 | |
|
MRF6S24140HSR3
|
NXP USA Inc. | FET RF 68V 2.39GHZ NI-88OS | 0 | $0.00 | |
BF909AWR,115
|
NXP USA Inc. | MOSFET N-CH 7V 40MA SOT143R | 0 | $0.00 | |
MRF5S19100HSR5
|
NXP USA Inc. | FET RF 65V 1.99GHZ NI-780S | 0 | $0.00 | |
|
MRF5S19100HSR3
|
NXP USA Inc. | FET RF 65V 1.99GHZ NI-780S | 0 | $0.00 | |
|
MRF5S19100HR5
|
NXP USA Inc. | FET RF 65V 1.99GHZ NI-780 | 0 | $0.00 | |
|
MRF5S21150HR3
|
NXP USA Inc. | FET RF 65V 2.17GHZ NI-880 | 0 | $0.00 | |
|
MRF5S21130HSR5
|
NXP USA Inc. | FET RF 65V 2.17GHZ NI-880S | 0 | $0.00 |