RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
BLC8G27LS-240AVJ
|
Ampleon USA Inc. | RF FET LDMOS 65V 14DB SOT12521 | 50 | $0.00 | |
BLC8G27LS-180AVY
|
Ampleon USA Inc. | RF FET LDMOS 65V 14DB SOT12753 | 55 | $0.00 | |
MMRF1316NR1
|
NXP USA Inc. | FET RF 2CH 133V 230MHZ TO270 | 62 | $0.00 | |
BLF9G20LS-160VJ
|
Ampleon USA Inc. | RF FET LDMOS 65V 19.8DB SOT1120B | 8 | $0.00 | |
BLF8G22LS-205VJ
|
Ampleon USA Inc. | RF FET LDMOS 65V 18.3DB SOT1239B | 28 | $0.00 | |
BLC8G27LS-140AVY
|
Ampleon USA Inc. | RF FET LDMOS 65V 14.5DB SOT12751 | 83 | $0.00 | |
BLF8G27LS-140,118
|
Ampleon USA Inc. | RF FET LDMOS 65V 17.4DB SOT502B | 87 | $0.00 | |
BLF8G10LS-270GVJ
|
Ampleon USA Inc. | RF FET LDMOS 65V 19.5DB SOT1244C | 90 | $0.00 | |
BLF6G38S-25,112
|
Ampleon USA Inc. | RF FET LDMOS 65V 15DB SOT608B | 50 | $76.88 | |
|
|
NXP USA Inc. | FET RF 100V 1.09GHZ PLD-1.5 | 83 | $0.00 |
BLC8G27LS-240AVJ
BLC8G27LS-180AVY
MMRF1316NR1
BLF9G20LS-160VJ
BLF8G22LS-205VJ
BLC8G27LS-140AVY
BLF8G27LS-140,118
BLF8G10LS-270GVJ
BLF6G38S-25,112