RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
PTFA071701EV4R250XTMA1
|
Infineon Technologies | FET RF LDMOS 170W H36248-2 | 0 | $0.00 | |
BF904A,215
|
NXP USA Inc. | MOSFET N-CH 7V 30MA SOT143 | 0 | $0.00 | |
BF904AR,215
|
NXP USA Inc. | MOSFET N-CH 7V 30MA SOT143 | 0 | $0.00 | |
BLC6G27-100,112
|
Ampleon USA Inc. | RF FET 28V SOT895A | 0 | $0.00 | |
BLF7G27LS-90P,118
|
Ampleon USA Inc. | RF FET LDMOS 65V 18.5DB SOT1121B | 0 | $0.00 | |
BLF7G27LS-140,118
|
Ampleon USA Inc. | RF FET LDMOS 65V 16DB SOT502B | 0 | $0.00 | |
MRF8P20165WHSR5
|
NXP USA Inc. | FET RF 2CH 65V 2.01GHZ NI780S4 | 0 | $0.00 | |
|
MRF8P20140WHSR5
|
NXP USA Inc. | FET RF 2CH 65V 1.91GHZ NI780S-4 | 0 | $0.00 | |
BLF7G10L-250,118
|
Ampleon USA Inc. | RF FET LDMOS 65V 19.5DB SOT502A | 0 | $0.00 | |
|
BLF7G10L-250,112
|
Ampleon USA Inc. | RF FET LDMOS 65V 19.5DB SOT502A | 0 | $0.00 |