RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
A2T21H100-25SR3
|
NXP USA Inc. | IC RF LDMOS TRANS CELL | 0 | $75.90 | |
MRFE6VP100HSR5
|
NXP USA Inc. | FET RF 2CH 133V 512MHZ NI780 | 0 | $74.93 | |
|
MMRF2007GNR1
|
NXP USA Inc. | RF LDMOS WIDEBAND INTEGRATED POW | 0 | $67.92 | |
|
A2T21S260W12NR3
|
NXP USA Inc. | AIRFAST RF POWER LDMOS TRANSISTO | 0 | $67.68 | |
|
A2T18S262W12NR3
|
NXP USA Inc. | AIRFAST RF POWER LDMOS TRANSISTO | 0 | $67.68 | |
|
A2T18S261W12NR3
|
NXP USA Inc. | AIRFAST RF POWER LDMOS TRANSISTO | 0 | $67.68 | |
MRF6VP3091NBR5
|
NXP USA Inc. | FET RF 2CH 115V 860MHZ TO272-4 | 0 | $67.37 | |
MRFE6S9125NR1
|
NXP USA Inc. | FET RF 66V 880MHZ TO-270-4 | 0 | $0.00 | |
|
MRFE6S9125NBR1
|
NXP USA Inc. | FET RF 66V 880MHZ TO-272-4 | 0 | $65.39 | |
|
AFT26HW050SR3
|
NXP USA Inc. | FET RF 2CH 65V 2.69GHZ NI780-4S4 | 0 | $63.78 |