RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
BLF1822-10,112
|
Ampleon USA Inc. | RF FET LDMOS 65V 13.5DB SOT467C | 0 | $0.00 | |
BF1212R,215
|
NXP USA Inc. | MOSFET N-CH DUAL GATE 6V SOT143R | 0 | $0.00 | |
BLF6G10-160RN,112
|
Ampleon USA Inc. | RF FET LDMOS 65V 22.5DB SOT502A | 0 | $0.00 | |
BF1212WR,115
|
NXP USA Inc. | MOSFET N-CH DUAL GATE 6V SOT343R | 0 | $0.00 | |
BLF404,115
|
Ampleon USA Inc. | RF FET NCHA 40V 11.5DB SOT409A | 0 | $0.00 | |
BLF6G38LS-100,112
|
Ampleon USA Inc. | RF FET LDMOS 65V 13DB SOT502B | 0 | $0.00 | |
BF909WR,115
|
NXP USA Inc. | MOSFET N-CH 7V 40MA SOT343 | 0 | $0.00 | |
BLF7G22LS-160,118
|
Ampleon USA Inc. | RF FET LDMOS 65V 18DB SOT502B | 0 | $0.00 | |
BLF7G22LS-130,112
|
Ampleon USA Inc. | RF FET LDMOS 65V 18.5DB SOT502B | 0 | $0.00 | |
BLF7G22LS-130,118
|
Ampleon USA Inc. | RF FET LDMOS 65V 18.5DB SOT502B | 0 | $0.00 |
BLF1822-10,112
BF1212R,215
BLF6G10-160RN,112
BF1212WR,115
BLF404,115
BLF6G38LS-100,112